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| FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features * 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V * Low gate charge ( typical 68 nC) * Low www..com Crss ( typical 30pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-3P G DS FQA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) Parameter FQA13N80 800 12.6 8.0 50.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 1100 12.6 30 4.0 300 2.38 -55 to +150 300 Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -- Max 0.42 -40 Units C/W C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA13N80 Rev. A1 FQA13N80 800V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA13N80 FQA13N80 Device FQA13N80 FQA13N80_F109 Package TO-3P TO-3PN TC = 25C unless otherwise noted Reel Size --- Tape Width --- Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS www..com / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 6.3A VDS = 50 V, ID = 6.3A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 800 -----3.0 ------ Typ -0.95 -----0.58 13 2700 275 30 Max Units --10 100 100 -100 5.0 0.75 -3500 360 39 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 400 V, ID = 12.6A, RG = 25 ---(Note 4, 5) 60 150 155 110 68 15 32 ---850 11.3 130 310 320 230 88 --- ---- VDS = 640 V, ID = 12.6A, VGS = 10 V (Note 4, 5) -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS =12.6A VGS = 0 V, IS = 12.6 A, dIF / dt = 100 A/s (Note 4) ------ 12.6 50.4 1.4 --- A A V ns C 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13mH, IAS =12.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 12.6A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQA13N80 Rev. A1 2 www.fairchildsemi.com FQA13N80 800V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150 C o www..com 10 0 10 0 25 C -55 C Notes : 1. VDS = 50V 2. 250s Pulse Test o o Notes : 1. 250s Pulse Test 2. TC = 25 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.8 RDS(ON) [ ], Drain-Source On-Resistance VGS = 10V 1.2 IDR, Reverse Drain Current [A] 1.5 10 1 VGS = 20V 0.9 10 0 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0.6 Note : TJ = 25 0.3 0 5 10 15 20 25 30 35 40 45 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 5000 4500 4000 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 160V 10 Ciss VGS, Gate-Source Voltage [V] VDS = 400V VDS = 640V Capacitance [pF] 8 3000 2500 2000 1500 1000 500 0 -1 10 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crss 2 Note : ID = 12.6 A 0 10 0 10 1 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQA13N80 Rev. A1 3 www.fairchildsemi.com FQA13N80 800V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 www..com 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 6.3 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 14 10 2 Operation in This Area is Limited by R DS(on) 12 ID, Drain Current [A] 10 1 ID, Drain Current [A] DC 10 0 100 s 1 ms 10 ms 10 s 10 8 6 4 2 0 25 10 -1 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 -2 10 10 1 10 2 10 3 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] Figure 11. Transient Thermal Response Curve Z JC(t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 N o te s : 1 . Z J C (t) = 0 .4 2 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) PDM t1 s in g le p u ls e 10 -2 0 .0 1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQA13N80 Rev. A1 4 www.fairchildsemi.com FQA13N80 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform www..com Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA13N80 Rev. A1 5 www.fairchildsemi.com FQA13N80 800V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms www..com FQA13N80 Rev. A1 6 www.fairchildsemi.com FQA13N80 800V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 www..com 4.80 0.20 1.50 -0.05 +0.15 9.60 0.20 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FQA13N80 Rev. A1 7 www.fairchildsemi.com FQA13N80 800V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN www..com Dimensions in Millimeters 8 www.fairchildsemi.com FQA13N80 Rev. A1 FQA13N80 800V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCXTM SILENT SWITCHER(R) UniFETTM FACT Quiet SeriesTM ACExTM OCXProTM UltraFET(R) GlobalOptoisolatorTM ActiveArrayTM SMART STARTTM OPTOLOGIC(R) GTOTM BottomlessTM SPMTM VCXTM HiSeCTM Build it NowTM StealthTM WireTM OPTOPLANARTM I2CTM CoolFETTM SuperFETTM PACMANTM SuperSOTTM-3 POPTM CROSSVOLTTM i-LoTM SuperSOTTM-6 Power247TM DOMETM ImpliedDisconnectTM SuperSOTTM-8 PowerEdgeTM EcoSPARKTM IntelliMAXTM SyncFETTM PowerSaverTM E2CMOSTM ISOPLANARTM TCMTM PowerTrench(R) LittleFETTM EnSignaTM www..com TinyBoostTM MICROCOUPLERTM FACTTM QFET(R) TinyBuckTM MicroFETTM FAST(R) QSTM TinyPWMTM MicroPakTM QT OptoelectronicsTM FASTrTM TinyPowerTM MICROWIRETM Quiet SeriesTM FPSTM TinyLogic(R) MSXTM RapidConfigureTM FRFETTM MSXProTM RapidConnectTM TINYOPTOTM SerDesTM TruTranslationTM Across the board. Around the world.TM ScalarPumpTM UHCTM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design First Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 www.fairchildsemi.com FQA13N80 Rev. A1 |
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